Formation of palladium-silicided shallow n +p junctions by phosphorus implantation into thin Pd or Pd 2Si films on a silicon substrate and subsequent anneal

Abstract

Formation of Pd-silicided shallow n +p junctions by implanting P + ions into thin Pd or Pd 2Si films on a Si substrate and subsequent annealing has been studied. Using these schemes, good n +p junctions can be formed at low annealing temperatures. A Pd 2Si-silicided shallow n +p junction with a leakage of about 2 nA/cm 2 at −5 V and a junction depth of about 0.1 μm can be obtained by annealing the sample with P + implantation into thin Pd 2Si films at 700°C. The thermal stability and silicide crystallinity of thin Pd 2Si films on Si can be significantly improved due to the implanted phosphorus dopant, as compared to the control samples without dopant incorporation.