Abstract
Thin films of the material PbSnI 4 have been deposited by vacuum evaporation. The electrical conductivity, its activation energy and dielectric breakdown strength have been found to be film thickness dependent for films ≤5000 Å. Conductivity is by anionic defect motion with an activation energy of 0.320 eV and ionic transference number of 0.995 at room temperature. The ionic transport has been independently verified by an electrochemical cell potential method with the use of the material in an all thin film solid state battery of the configuration M/PbSnI 4/(AgI,Ag), (M=Sn,Pb), giving OCV values close to the thermodynamic theoretical maximum for the formation of MI 2 at the anode.
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