Ion-Induced Surface and Bulk Displacement Threshold for Epitaxial Growth

Abstract

For a specific ion, its energy needed for moving a target atom on a surfacial monolayer but avoiding the occurrence of displacement damage in the underlying bulk has been calculated by a simplified interaction model at low energy region through binary collision approximation. The scale of damage energy dependent on the mass and incident energy of projectiles has been obtained under the assumptions of a well-defined surface and bulk atom displacement energy threshold and standard collision cross sections. The accuracy of this evaluation for the angular average over the scattering cross section was compared with experimental observations and other methods with complex potentials. The results presented here were applied to H, Ar and Si projectiles bombarding on semiconductor Si and SiGe targets. The theoretical prediction and experimental result are in good agreement for the growth of ion-beam-assisted epitaxial layer.