Abstract
The deposited energy during film growth with ionbombardment, correlated to the atomic displacement on the surfacemonolayer and the underlying bulk, has been calculated by a simplifiedion-solid interaction model under binary collision approximation. Theseparated damage energies caused by Ar ion, different for the surfaceand the bulk, have been determined under the standard collision crosssection and a well-defined surface and bulk atom displacement thresholdenergy of titanium nitride (TiN). The optimum energy scope shows that theincident energy of Ar+ around 110 eV for TiN (111) and 80 eV forTiN (200) effectively enhances the mobility of adatom on surface butexcludes the damage in underlying bulk. The theoretical prediction andthe experimental result are in good agreement in low energy ionbeam-assisted deposition.
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