Abstract
By using megaelectronvolt 4He ion backscattering techniques and transmission electron microscopy, we have investigated the interactions of ion beams with thin film structures in a number of silicide-forming systems. The mixed layer was found to be an equilibrium compound for near-noble metals and an amorphous phase for refractory metals. Differences in behavior have also been observed in near- noble metal systems. For palladium, the Pd 2Si phase grew with ion dose and remained crystalline up to high dose. For nickel, the compound Ni 2Si was formed initially and became amorphous on prolonged irradiation. All the results indicate the significance of atomic mobility at target temperatures in determining the phase formation and in explaining the sensitivity of the silicides to ion bombardment.
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