Abstract
An ion-implanted, shallow n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> layer has been used for lowering the barrier height of PtSi-n-Si Schottky diodes. Barrier height reductions up to 200 mV have been achieved with little degradation of the diode's reverse-current characteristics. During silicide formation, the implanted ions are "pushed" ahead of the PtSi-Si reaction zone and pile up at the silicide-silicon interface, resulting in more barrier lowering than would be expected from the ion-implant dose. A model including the impurity pileup is presented and calculations based on the model are shown to be in reasonable agreement with experimental measurements.
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