Abstract
A Schottky diode-based sensor is a promising structure for high sensitive and low power sensor. This paper investigates a device called back-to-back Schottky diode (BBSD) for humidity sensing operation. The BBSD provides simpler device configuration that can be fabricated using less complicated process. The current-voltage characteristic of the fabricated BBSD was measured at different relative humidity. From the obtained characteristics, series resistance, barrier height and ideality factor was analyzed. The device current increased at higher humidity level. The current increase could be associated to the decrease in series resistance, barrier height and ideality factor. When humidity decreased from 11 % to 97%, the barrier height showed reduction of 0.1 eV. The barrier height reduction was explained by considering electric field-induced reduction of graphene oxide. The observed result confirmed the device feasibility as promising simple and low cost humidity sensor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: TELKOMNIKA (Telecommunication Computing Electronics and Control)
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
