Ion implantation damage in InP

Abstract

The disorder generated by 40 keV light (N +) and heavy (Bi +) ion irradiation of InP at 40 K and room temperature has been measured, using Rutherford backscattering channeling techniques, as a function of ion flux density and fluence. For the light ion irradiation the damage retained in the substrate is highly dependent upon irradiation temperature and upon flux density for room temperature irradiation. Such dependencies are much weaker for heavy ion irradiation. These results, together with the fluence dependence of disorder, are consistent with a mainly direct impact amorphisation, stable against annealing, process with heavy ion implantation and a mainly simpler defect generation, unstable against annealing, process with light ion implantation. Studies of disorder generation in both the In and P sublattices are also discussed.