Abstract
The as-grown GaN by Metalorganic Chemical Vapor Deposition was utilized to study the irradiation effects on GaN epilayers. The stopping range of ions in the matter is studied to choose the energy range for irradiation. The grown epilayers were irradiated with light and heavy ions of O7+ and Ag12+ by varying ion fluence. The X-ray Diffraction confirmed the wurtzite crystal structure for pristine and all the irradiated GaN epilayers. Atomic force microscopy showed high surface roughness for heavy ion irradiation when compared with light ion. Micro-Raman analysis was carried out through the Lorentz line fitting and calculated the carrier concentration and phonon lifetime. In light and heavy ion irradiation, the carrier concentration enhances with defect formations. X-ray Photoelectron Spectroscopy analysis showed that light ion irradiation caused oxygen bonding, while heavy ion irradiation led to the Ga–Ga bond shift, revealing film degradation.
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