Abstract
The process of ion beam mixing in the Sn-Si system is investigated by varying both the incident Ar + ion energy (100–220 keV) at a fixed dose (2 × 10 16/cm 2) and the fluence (5 × 10 15/cm 2− 5 × 10 16/cm 2) at a constant energy (130 keV). The analyses of the spectra. obtained from Rutherford backscattering (RBS) of 3 MeV alpha particles, have shown that, in these samples (i) the width of the intermixed Sn-Si region increases as the Ar + energy or fluence is increased (ii) the number of Si atoms/cm 2 increases linearly with Ar + dose and (iii) no significant penetrating tail is present in the Sn profile. From conversion electron Mössbauer (CEM) studies of these systems, it is observed that, at the most, about 40% of Sn in the intermixed layer contributes to form the Sn (1− x) Si x compound. It is deduced from these results that x is in the range 0.5 ≦ x ≦ 0.8. These observations also suggest a large transport of Si atoms into the Sn layer, possibly due to radiation damage effects caused by Ar + ion bombardment.
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