Abstract
The evolution of 100 keV Si+ beam irradiated tin layers on silicon wafers was monitored by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM) and conversion electron Mössbauer spectroscopy (CEMS). The irradiation fluence varied from 1 × 1015 to 2 × 1017 cm-2. After a 4 × 1016 cm-2 fluence, silicon atoms reach the surface, a nd the unsputtered tin atoms are found either in precipitates embedded in an amorphous surface layer, the thickness of which increases with increasing irradiation fluence, or incorporated in substitutional sites in amorphous silicon. Indeed, CEMS results yield Mössbauer average parameters of substitutional tin in silicon and give an estimation of the lower limit of substitutional atomic tin fraction.
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