Ion mixing kinetics study by in situ resistance measurements in the Au/Si system

Abstract

Ion beam mixing studies in the Au/poly-Si and Au/Si(100) system have been conducted by in situ resistance measurements. The relationship between sheet resistance of the irradiated samples and the growth of an amorphous Au 5 Si 2 layer as measured by Rutherford backscattering has been established in this system. An analytical model was employed to explain the linear relation between conductance g and square root of dose φ 1 2 . This in situ technique is used to study the kinetics of ion beam mixing in the Au/Si system.