Abstract
Ion-beam mixing at Ti-Si interfaces induced by krypton ions has been studied as a function of fluence and temperature by means of sheet resistivity measurements and a 2 MeV4He+ Rutherford backscattering spectrometry. For mixing induced by 200 keV Kr+, substrate temperatures during irradiation between 30 and 400° C and with fluences ranging from 1.0×1015 to 7.5×1015 Kr+/cm2, the amount of mixing has a linear fluence dependence at low fluences and square-root fluence dependence at high fluences. Above ≈100° C, the mixing is strongly temperature dependent. The activation energy for the temperature-dependent part is ≈0.115 eV. Also, 300 keV Kr+ ion mixing at room temperature with fluences ranging from 2.5×1016 to 1.0×1017 Kr+/cm2 displays a linear fluence dependence in this fluence range and the formation of nonuniform Ti x Si1−x layers.
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