Abstract
Indium zinc tin oxide (IZTO) semiconducting thin films have been investigated as active channel layers for thin-film transistor (TFT) applications. The IZTO layer was deposited by radio frequency magnetron sputtering (RF-MS) using a sintered IZTO ceramic target with an In:Zn:Sn metal atomic ratio of 40:50:10 on the HfO2 layer either deposited using an atomic layer deposition (ALD) or RF-MS. The annealing treatments after IZTO and HfO2 film depositions were performed in air using a tube furnace and in an oxygen atmosphere using rapid thermal annealing at 400 °C, respectively. Optical transparency measured by UV-Vis spectroscopy showed that the HfO2 films deposited by either RF-MS or ALD were transparent in the visible region and had a similar band gap energy of about 4.9 eV. Electrical characteristics of IZTO based TFT were comparatively evaluated for the samples with IZTO/ALD or RF-MS HfO2/n++-Si structure. The IZTO TFT sample with 60 nm-thick HfO2 deposited by ALD had an on/off current ratio value of 7.0 × 106 and a field-effect mobility value of 6.2 cm2/Vs, which was superior to that with RF-MS deposited HfO2.
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