Abstract
The state-of-the-art visible semiconductor lasers are reviewed. The characteristics and reliability problems of ternary and quarternary lasers grown on GaAsP compositionally graded layers are presented. The lasing properties and operating life of the transverse mode stabilized AlGaAs visible lasers grown on close lattice matched GaAs substrates are described, particularly on transverse junction stripe (TJS) lasers. TJS lasers oscillate in a single longitudinal mode with the fundamental transverse mode, and have the very low threshold current of 20–30 mA for the wavelengths between 900 and 750 nm. Negligible degradation has been observed in TJS lasers with the lasing wavelength around 780 nm after 4500 hr life test at 50°C with the constant lasing output of 3 mW/facet.
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