Surface and bulk leakage currents in transverse junction stripe lasers

Abstract

This paper presents two ways to reduce leakage currents in transverse junction stripe (TJS) lasers: by reducing surface leakage current and by reducing bulk leakage current. The surface leakage is reduced by treatment with (NH4)2S, while the bulk leakage current is reduced by isoelectronic doping with indium. We report the first detailed experimental investigation on the effect of the chemical treatments on the electrical characteristics and laser thresholds of TJS lasers. Surface treatments of (NH4)2S are demonstrated that reduce surface leakage currents in current injection lasers. After the chemical treatments, a 20-fold reduction in current has been achieved with GaAs/AlGaAs lattice-matched multiple-quantum-well TJS lasers. The laser thresholds of lattice-matched TJS lasers are reduced by 12 mA (or 16%) after the chemical treatments. In addition, InGaAs-GaAs-AlGaAs strained-layer single-quantum-well lasers are treated chemically and a reduction in the laser threshold (10 mA or 14%) is observed. The surface treatments are still effective after 7 days. We also report the first experimental investigation on the effect of isoelectronic In doping on the current-voltage characteristics of Zn-diffused lateral p-n junctions. The trap density in an In-doped AlGaAs layer is reduced by more than one order of magnitude compared to that in an AlGaAs layer without In doping. Bulk leakage currents (shunting currents) in TJS lasers can be reduced by using isoelectronic In doping, which should reduce threshold currents and improve the temperature dependence of TJS lasers.