Abstract
Resistive Random Access Memory (ReRAM) devices have gathered significant attention recently for high-density non-volatile data storage applications. However, there are several challenges that need to be addressed to take complete benefit of this enabling technology. This paper discusses the role of intentional doping in transition metal oxide dielectrics, particularly HfO2, and its implications on the device performance. Our studies indicate that Mg doped HfO2 based ReRAM devices require lower electroforming voltage compared to undoped HfO2 based ReRAM devices. The reduction in set/reset voltages was also achieved in ReRAM devices with Mg doped HfO2. Excellent bipolar switching and endurance characteristics were achieved demonstrating doping in HfO2 as a viable route for achieving the desired ReRAM characteristics.
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