Abstract
Current status of silicon on sapphire technology has been reviewed with emphasis on the following subjects: (a) economical aspects of SOS; material availability and costs, (b) physical limitation to the carrier transport phenomena in epitaxial silicon layer, (c) characterization of SOS; role of crystal defect in silicon film on the physical and electrical properties of silicon layer, (d) device characteristics of MOSFET on SOS wafer; reduction in junction capacitance, lack in the substrate bias effects etc., (e) comparison of SOS LSI with the other bulk LSI's for several basic circuit configurations.
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