Abstract
It will be shown that nanogaps can be fabricated by selective etching of fully strained SiGe layers embedded in single crystalline silicon. It will be shown that intrinsic stress is the dominating parameter for the anisotropy. High temperature etching with gaseous hydrochloric acid allows a large etch selectivity RSiGe/RSi depending on surface orientation, Ge concentration and temperature during etching. Multilayer nanogaps have been prepared and completely filled by several deposition techniques. Applications regarding diodes and MOSFETs will be given.
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