Abstract
The aim of this work is to perform an in-depth analysis in order to identify the key contributors to the total flicker noise in advanced MOSFET technologies, e.g. UTBOX, Gate-all-around (GAA) nanowire or nanosheet FET devices. For all investigated devices of these technologies an increase of the flat-band noise power spectral density level with the increase of the applied gate voltage was observed. This may be related to the correlated carrier number and mobility fluctuations noise mechanisms and/or with additional access resistances noise contributions. Different existing models have been applied in order to identify the key 1/f noise mechanism. However, a discrepancy in the obtained 1/f noise contributors is highlighted, and leads to some questioning about which employed model is most accurate and gives good indications on the key contributors and estimated parameters of the total flicker noise.
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