Abstract
Local strain engineering and its applications to gallium nitride based optoelectronic devices are reviewed. The strain in gallium nitride heterostructures can be locally controlled via nanostructures and enables a new degree of freedom for the device design. The optical properties including emission wavelength, intensity, polarization can be geometrically tuned by varying the dimensions and shapes of the nanostructure cross sections. The physics, fabrication, optical properties, and challenges of gallium nitride nanostructures are discussed. Device applications are described including single photon sources, multi-wavelength light-emitting diodes, photodetectors for compressive sensing, and tactile sensors.
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