Tunable Optoelectronic Properties of WS2 by Local Strain Engineering and Folding

Abstract

AbstractLocal strain engineering is an exciting approach to tune optoelectronic properties of materials. Two‐dimensional (2D) materials such as 2D transition metal dichalcogenides (TMDs) are particularly well‐suited for this purpose due to their high flexibility and deformability. Local strain engineering in 2D TMDs is typically achieved via strained wrinkles. Wrinkles on thick TMD layers have been reported to show interesting photoluminescence enhancement due to bandgap modulation and funneling effect. However, the wrinkles in ultrathin TMDs are not investigated because they can easily fall down to form folds. Both wrinkles and folds are achieved simultaneously in 1–3L tungsten disulfide (WS2) using a new fabrication technique. A layer‐dependent reduction in surface potential is found for both folded layers and perfect packed layers due to the dominant interlayer screening effect. The strain produced from the wrinkles modulates the semiconductive junction properties significantly. Thermoionic modeling suggests that strained (1.6%) wrinkles can lower the Schottky barrier height (SBH) by 20%. Upon illumination, SBH reduces significantly due to photogenerated carriers. This is an important advance toward controlling the optoelectronic properties of 2D TMDs via strain engineering, with applications for electronics and optoelectronics devices.