Abstract
Recently, TCNCP (Thermal Compression with Non-Conductive Paste) flipchip technology has received much attention because of the demands of flipchip with high bump density for mobile devices and 2.5D/3D applications. TCNCP technology is a relatively new technology that is applied for flipchip with very fine bump pitch. One of the advantages of TCNCP process is that it could ensure IC flatness during local reflow process as IC is under pressure during TCNCP process. Here TCNCP technology is used with Au stud bump for mobile processor. Au stud bumping process is done with sawn IC with standard wire bonder. The Au stud bumps are usually connected to trace on the substrate (Bump on Trace) as there is no space for bump landing pads. Pressure and heat are applied simutaneoursly during thermal compression bonding (TCB) process at temperature of less than 230︒C. The formed Au to Au joint is mechanical contact without interrmetallic formation. Reliability results show that although without intermetallics, the package structure can pass TCT 1000 cycles, HTS 1000 hours and uHAST 192hrs without failures.
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