Abstract
This study aims to understand the performance of continuous-wave laser lateral crystallization (CLC) poly-Si1-xGex TFTs. The transfer characteristics of n-ch CLC poly-Si1-xGex TFTs revealed that the threshold voltages shifted in the positive direction compared with those of CLC poly-Si TFTs with increasing Ge concentration. The characteristics of CLC n-ch poly-Si1-xGex TFTs can be explained by the formation of acceptors. For p-ch TFTs, the transfer characteristics of CLC poly-Si1-xGex TFTs exhibited a larger Ioff than those of CLC poly-Si TFTs. The Ion/Ioff ratio is small for p-ch parallel CLC poly-Si1-xGex TFTs and is weakly dependent on the gate length. In contrast, p-ch perpendicular CLC poly-Si1-xGex TFTs exhibit large Ion/Ioff values for long gate lengths. The variation in the Ion/Ioff ratio of p-ch CLC poly-Si1-xGex TFTs according to the parallel or perpendicular and long or short gate length is explained by Ge segregation along the grain boundary, resulting in the formation of a high-concentration p-type conduction region along the grain boundary, which connects the SD regions.
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