Abstract
Tri-gate channel structures were applied to polycrystalline silicon (poly-Si) thin-film transistors (TFTs) fabricated by continuous-wave (CW) laser lateral crystallization (CLC). We had two objectives in using tri-gate structures in CLC poly-Si TFTs. One was the enhancement of effective electron mobility (µeff) by using the tensile strain induced by the CLC process and the lateral-strain-relaxation effect in tri-gate structures. The other was the reduction of µeff variation caused by increasing the number of surfaces with different crystal orientations by up to a factor of three. By applying tri-gate structures to CLC poly-Si TFTs, both 8% µeff enhancement and 41% reduction of µeff variation were achieved at the surface carrier density of 5×1012 cm-2. These results are expected to be useful for the device size shrinkage of high-performance poly-Si TFT circuits.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
