Abstract
Large sized, round shaped (100) semi-insulating GaAs substrates are now available by both Liquid Encapzulation Czochralski (LEG) and horizontal Bridgman (HB) techniques. Homogeneity of LEC-grown substrates are characterized from the viewpoint of dislocation density distribution. It is clearly demonstrated that dislocation density distribution affects evidently FET threshold voltage dispersion and also leakage current. The influence of dislocation density distribution on crystal properties is reviewed. Homogeneity of HB-grown, Cr-doped ingot is also examined by Hall measurements after Si implantation, and the results are compared with those of LEC-grown ingot.
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