Abstract
Large area, low defect CdTe substrates are essential for high quality epitaxy of HgCdTe in infrared detector applications. Vertical Bridgman (VB) CdTe normally exhibits higher than desired dislocation density and sub-grain structure. A seeded Horizontal Bridgman (HB) technique has been used to grow CdTe single crystals which exhibit superior crystalline qualities when compared to standard VB substrates. The HB grown CdTe crystals were not intentionally doped and had resistivities in the 107 ohm-cm range. The etch pit density (EPD) near the seed and the tail end sections is 5 × 104 cm−2s, while wafers from the middle section of the ingot have EPDs in the 104 cm−2 range. Furthermore, HB EPD patterns indicate the absence of sub-grain boundaries. X-ray rocking curves are very sharp and exhibit FWHMs as low as 9 arc-sec. By comparison, the best samples from standard VB CdTe ingots exhibit x-ray rocking curves with FWHMs in the >30 arc-sec range. The IR transmission of HB material is as high as 57% in the 2.5 to 20 μm region. Results of electrical and optical characterization are presented.
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