(Invited) Advanced Measurement Techniques for the Characterization of ReRAM Devices

Abstract

In some Resistive Random Access Memories, the high and low resistance states (HRS and LRS, respectively) are associated to the creation (Set) and disruption (Reset) of a conductive filament (CF) that locally connects or disconnects the electrodes. Usually, a current limit (CL) must be fixed during the Set process. Typically, these devices are characterized using semiconductor parameter analyzers (SPA), which have a low sampling rate and a somehow uncontrolled current limitation mechanism. In this work, a low-cost setup with large sampling rate and a well-controlled wide-range current limiting unit is presented. The system is suitable to capture fast transients during the Set/Reset processes and to detect Random Telegraph Noise unresolvable by SPAs. These measurements can be combined with a Conductive Atomic Force Microscope, to get information on CF properties that cannot be directly measured with SPAs, as the spatial distribution of current in the CF at LRS and HRS.