Abstract
Thermal evaporation is a simple and rapid process to fabricate BaSi2 films for solar cell applications. In this study, we investigated the extent of Ba diffusion into the Si substrate and SiO evaporation, which occur during the BaSi2 film formation, aiming at elucidating BaSi2 film formation processes. Composition depth profiles determined by Auger electron spectroscopy reveal that SiO evaporates at 650 °C and above concurrently with surface oxidation, which is supported by surface roughening observed by secondary electron microscopy. Ba diffusion into the substrate is also detected from composition depth profiles. It is demonstrated that the amount of Ba in-diffusion decreases as the deposition rate increases. The present findings serve for controlling the composition of BaSi2 evaporated films.
Published Version
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