Abstract
Porous silicon layer was formed by electrochemical anodization on n- and p-type silicon surface. Thereafter n-type TiO 1.98 and ZnO〈Al〉 thin films were deposited onto porous silicon surface by electron-beam evaporation and magnetron sputtering, respectively. A Pt catalytic layer and Au electrical contacts for further electrical measurements were deposited by ion-beam sputtering. Changes in sensitivity versus time of obtained structures were examined for different concentrations of hydrogen gas and propane–butane mixture. High sensitivity and selectivity to hydrogen gas was detected. All measurements were carried out at 40 °C.
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