Investigations of Cu bond structures and demonstration of a wafer-level 3D integration scheme with W TSVs

Kuan‐Neng Chen ,S H Lee,Paul Andry ,C Cabral ,Jian–Qiang Lü

doi:10.1109/vtsa.2010.5488904

Investigations of Cu bond structures and demonstration of a wafer-level 3D integration scheme with W TSVs

Kuan‐Neng Chen , S H Lee + Show 3 more

https://doi.org/10.1109/vtsa.2010.5488904

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Publication Date: Jan 1, 2010

Citations: 2

Affiliation: Physical Sciences (United States), University of Maryland, College Park, IBM Research - Thomas J. Watson Research Center, Rensselaer Polytechnic Institute, National Yang Ming Chiao Tung University

#Bond Structures #3D Integration Scheme + Show 8 more

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Abstract

Evaluations of two Cu bond structures, oxide-recessed and lock-n-key, are reported. In addition to excellent electrical characteristics of bonded via chain, alignment tests show lock-n-key bond structures have better performance than oxide-recessed ones. Finally a wafer-level three-dimensional (3D) integration scheme using lock-n-key Cu bond structure with W TSV is demonstrated.

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