Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

Peng Wang,Wenwu Pan,Qian Gong,Shumin Wang,Kai Wang,Li Yue,Xiaoyan Wu

doi:10.1063/1.4937412

Abstract

InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP1-xBix films Photoluminescence (PL) was investigated. N-type doping in the InP1-xBix epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.

Highlights

III–V dilute bismuth (Bi) compound semiconductors have been attracting great attention for their promising potentials in the applications for near and mid infrared emitters and detectors.[1,2,3,4] Incorporation of Bi atoms at anion sites was proved to introduce distinct band gap reduction and enhanced spin-orbit (SO) splitting
InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT)
Temperature insensitive optical emission was detected in dilute InGaAsBi,[6] which is beneficial for telecom lasers

Summary

Introduction

III–V dilute bismuth (Bi) compound semiconductors have been attracting great attention for their promising potentials in the applications for near and mid infrared emitters and detectors.[1,2,3,4] Incorporation of Bi atoms at anion sites was proved to introduce distinct band gap reduction and enhanced spin-orbit (SO) splitting. Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis.

Results

Conclusion