Abstract
A new reliability screening method for semiconductor devices, based on laser acceleration of minority carriers generation-recombination at deep level centre, was introduced in a previous work. For explaining the results of modeling the optically induced acceleration, the presumption that an avalanche multiplication of current-temperature appears at the deep level centre was made. In this work, a model for simulating the thermal processes at a deep level centre in silicon devices under laser irradiation is proposed. The appearance of a thermal avalanche process in the photo-generated current channel, at a deep level centre was emphasized. The condition of appearance was identified, too.
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