Abstract
The influence of Si doping on the photoluminescence (PL) properties of (Al0.3Ga0.7)0.5In0.5P/Ga0.5In0.5P multiple-quantum-wells (MQWs) was studied. For the samples without p-type layers, the PL peak wavelength from (Al0.3Ga0.7)0.5In0.5P/Ga0.5In0.5P MQWs did not vary when Si was doped in MQWs, the PL peak intensity did not change obviously and the PL FWHM broadened. We consider that Si doping results in worse interface quality of (Al0.3Ga0.7)0.5In0.5P/Ga0.5In0.5P MQWs. However, for the full light-emitting diode (LED) structure samples, the PL intensity of MQWs obviously increased when Si was doped in MQWs. The PL intensity from MQWs with Si-doped barriers was about 13 times stronger than that of undoped MQWs. The PL intensity from MQWs with Si-doped barriers and wells was strong as 28 times as that of undoped MQWs. The reasons are discussed.
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