Abstract
In this work, transient substrate currents during switching under an inductive load of the lateral insulated gate bipolar transistor (IGBT) and metal-oxide-semiconductor field effect transistor (MOSFET) on silicon-on-insulator (SOI) film were investigated numerically and experimentally. Substrate currents at the turn-on and turn-off transients of the two devices were estimated, and their behavior was compared. Both devices have high substrate currents at the turn-on transient. Differences between the two devices appear at the turn-off transient. In the IGBT a low substrate current flows, whereas the MOSFET has a high substrate current like that at the turn-on transient. This is attributed to the difference in the mode of operation at the turn-off transient in the two devices.
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