Extraction Enhanced Lateral Insulated Gate Bipolar Transistor: A Super High Speed Lateral Insulated Gate Bipolar Transistor Superior to Lateral Dobule Difused Metal Oxide Semiconductor Field-Effect Transistor

Abstract

We have successfully developed novel extraction enhanced lateral insulated gate bipolar transistors (E2LIGBTs) in conventional silicon on insulator (SOI) wafers, which exhibit super-high speed switching of 34 ns turn-off time and a low on-state voltage of 3.7 V at 84 A/cm2 simultaneously with a high breakdown voltage of 738 V. This is the first report showing its superior switching speed and on-resistance compared to conventional lateral double diffused metal oxide semiconductor field-effect transistor (LDMOS). The superior performance is achieved by a new anode structure designed with the proposed E2 concept, which simultaneously achieves enhanced electron extraction and suppression of hole injection at the anode region without life time control. The E2 concept is realized using the anode structure, consisting of a narrow p+-injector and a wide Schottky contact on a lightly doped p-layer over an n-buffer. The switching speed can be controlled by the area ratio of the Schottky area over the injector area.