Abstract
The structure of (p)3C-SiC-(n)6H-SiC epitaxial structures obtained by sublimation epitaxy in vacuum on 6H-SiC substrates was studied by methods of X-ray topography, X-ray diffraction, and transmission electron microscopy. The results showed high structure perfection in the epitaxial layers of both SiC polytypes with a sharp interface between the 3C-SiC and 6H-SiC layers.
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