Abstract
In present paper, 3C-SiC films grown by sublimation epitaxy in vacuum on 6H-SiC substrates with (0001) C orientation was investigated. X-ray diffraction analysis show that this epilayers has high structural perfection. Raman spectroscopy study shows that 3C-SiC epitaxial layers was grown on 6H-SiC without arising any intermediate layers. Within the EL spectrum of p-6H-SiC/n-3C-SiC heterostructures was simultaneously presence of EL band, connected with free exiton recombination in both SiC polytypes. Found also was a shift of EL peak, connected with free exiton recombination in 3C-SiC, in 3C-SiC/6H-SiC heterojunction, to short wave spectral region. It is concluded that optoelectronic devices, such as quantum cascade lasers or QW detectors with unique parameters, can be developed using SiC polytype heterostructures without any problems with the lattice mismatch and interface roughness, encountered in the case of conventional semiconductor heterostructures.
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