Abstract
In the paper is shown that the metal is a more active partner in Schottky diodes (SD) based on metal-semiconductor contact (MSC) from the series of semiconductor devices. It is shown the structural inhomogeneity of the interface, as a result of which the MSC as a parallel connection of numerous subdiodes having different parameters. To reveal the inhomogeneity of the metal on the properties of the MSC, the dependence of the barrier height of Schottky diodes on the contact area was investigated. It was assumed that in the case of a contact of a single-crystal semiconductor with a polycrystalline metal, the degree of inhomogeneity and accordingly, the number of subcontacts grow with increasing area.
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