Investigation of the impact of mole-fraction on the digital benchmarking parameters as well as sensitivity in GaXIn1−XAs/GaYIn1−YSb vertical heterojunctionless tunneling field effect transistor

Behzad Rajabi,Mahdi Vadizadeh

doi:10.1142/s0217979221501617

Abstract

Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb vertical heterojunctionless tunneling field effect transistor (VHJL-TFET) has been suggested to optimize the digital benchmarking parameters. In the proposed VHJL-TFET with type II heterostructure (i.e., [Formula: see text] and [Formula: see text]), slight changes in gate voltage cause switching from OFF-state to ON-state. As a result, the electrical properties of Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET are excellent in the sub-threshold region. The heterostructure with III–V semiconductors in the source-channel region increases the ON-state current ([Formula: see text]) of the VHJL-TFET. Comparing the results of Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET with the simulated devices with type I heterostructure (i.e., [Formula: see text] and [Formula: see text]) and type III heterostructure (i.e., [Formula: see text] and [Formula: see text]) shows the improvement by 26% and 15% in the average subthreshold slope (SS). Sensitivity analysis for VHJL-TFET with the type II heterostructure shows that the sensitivity of OFF-state current ([Formula: see text] to the body thickness ([Formula: see text] and doping concentration ([Formula: see text] is more than the sensitivity of the other main electrical parameters. The Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET with a channel length of 20 nm, [Formula: see text] nm, and [Formula: see text] cm[Formula: see text] showed the [Formula: see text] mV/dec, [Formula: see text]/[Formula: see text], and [Formula: see text] mA/um. As a result, Ga[Formula: see text]In[Formula: see text]As/Ga[Formula: see text]In[Formula: see text]Sb VHJL-TFET can be a reasonable choice for digital applications.

Highlights

Subthreshold slope (SS) of less than 60mV/dec and low leakage current of tunneling field effect transistor (TFET), respectively, causes an increase in switching speed and causes a reduction in static power consumption in digital circuits performance [1,2,3]
Equation 1 shows that both parameters energy band gap (Eg) and m∗ play an important role in the performance of the TFET device
The effects of changes in indium mole fraction (X) in the drain-channel region and Y in the source region are comprehensively examined by numerical simulator to improve digital benchmarking parameters of GaXIn1-XAs/GaYIn1-YSb VHJL-TFET

Summary

Introduction

Subthreshold slope (SS) of less than 60mV/dec and low leakage current of tunneling field effect transistor (TFET), respectively, causes an increase in switching speed and causes a reduction in static power consumption in digital circuits performance [1,2,3]. TFET device has attracted the attention of many researchers for digital applications [4, 5]. The ultra-sharp doping concentration gradient in the source/channel and the drain/channel junctions complicates the fabrication process of TFET device in nanometer regime [6, 7]. A junctionless TFET (JLTFET) has been proposed, in which issues caused by ultra-sharp doping concentration gradient in the source/channel and the drain/channel junctions are eliminated [6,7,8,9,10,11,12]. In JLTFET device, the advantages of conventional TFET and junctionless field effect transistor are combined [7, 13]

Objectives

Results

Conclusion