A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio

Saeid Marjani,Seyed Ebrahim Hosseini,Rahim Faez

doi:10.1063/1.4962969

Saeid Marjani, Seyed Ebrahim Hosseini + Show 1 more

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https://doi.org/10.1063/1.4962969

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Abstract

In this paper, a silicon–on–insulator (SOI) p–n–p–n tunneling field–effect transistor (TFET) with a silicon doped hafnium oxide (Si:HfO2) ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band–to–band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3) and strontium bismuth tantalate (SrBi2Ta2O9) provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling barrier width. Compared with the conventional p–n–p–n SOI TFET, the on–state current and switching state current ratio are appreciably increased; and the average subthreshold slope (SS) is effectively reduced. The simulation results of Si:HfO2 ferroelectric p–n–p–n SOI TFET show significant improvement in transconductance (∼9.8X enhancement) at high overdrive voltage and average subthreshold slope (∼35% enhancement over nine decades of drain current) at room temperature, indicating that this device is a promising candidate to strengthen the performance of p–n–p–n and conventional TFET for a switching performance.

Highlights

A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio
Incessant downscaling in the metal oxide semiconductor (CMOS) device is facing critical issues such as leakage current, short–channel effects (SCEs) and high power consumption
Since current are controlled by the band–to–band tunneling (BTBT) mechanism on the source–channel interface, TFETs can achieve subthreshold slope less than 60 mV/decade at room temperature, which allows for a more aggressive reduction of the threshold and supply voltages.[1,2,3,4]

Summary

Introduction

A silicon doped hafnium oxide ferroelectric p–n–p–n SOI tunneling field–effect transistor with steep subthreshold slope and high switching state current ratio. The integration of coupling the Si:HfO2 ferroelectric is applied to p–n–p–n SOI TFETs in order to further improve the performance.

Results

Conclusion