Abstract
GaAs field-effect transistors (FET's) utilizing multiple /spl delta/-doping profiles to generate different shape of equivalent channels were demonstrated. The proposed structures containing three different triple-/spl delta/-doping profiles were grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The theoretical and experimental results in the triple-/spl delta/-doped GaAs structures exhibit much superior device performance than that of conventional uniform-doped GaAs structure. Besides, the proposed structures with graded-like /spl delta/-doping profiles show significantly improved linearity of transfer characteristics when compared to that without graded-like triple-/spl delta/-doping structure. The structure also revealed an extrinsic transconductance as high as 180 mS/mm for a gate length of 2 /spl mu/m.
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