Abstract
This letter demonstrates a novel GaAs/In/sub 0.25/Ga/sub 0.75/As/GaAs pseudomorphic heterostructure with /spl delta/-doping on the buffer prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The proposed device with a 1.5×80 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> gate reveals an extrinsic transconductance as high as 250 (305) mS/mm and a saturation current density as high as 790 (890) mA/mm at 300 (77) K. Significantly improvements on forward gate voltage swing (up to 3 V) and on reverse leakage current (smaller than 10 μA/mm at -6.5 V) are demonstrated due to inverted parallel conduction (IPC) effect. We also carried out secondary-ion mass spectrometry (SIMS) profiles to confirm the quality of the proposed device.
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