Investigation of the Effect of Combined Photo- and Thermal Annealing on the Structure and Properties of Zinc Oxide Films for Flexible Electronics

Abstract

In this work, the evolution of the structural electrophysical parameters of nanostructured zinc oxide films, the preparation of a sol-gel by thermal treatment and combined treatment, including thermal exposure and UV exposure, were studied. It has been established that the use of thermal treatment of films leads to the formation of large aggregates (20—30 µm), density to enlargement with the duration of processing, while the structure of the material at a low level of the hierarchy, determined by the sensitivity of the sensitivity to analysis, as well as the optical band gap is practically independent from processing time. This is probably due to the formation of nanoparticles of the material responsible for the properties associated with the accumulation of the sol prior to its formation on the substrates. The introduction of additional UV irradiation into the system leads to the destruction of aggregates formed during heart failure and the formation of X-ray amorphous ZnO particles during treatment for 90 minutes. Increasing the processing time of the issuance to "crosslinking" the selection, the number of sizes of single crystals and the simultaneous increase in the concentration of point defects, leading to a decrease in the optical revealed band gap. Thus, the combined UV and heat treatment of the film makes it possible, on the one hand, to form a material with a nanocrystalline structure, and, on the other hand, to control its defectiveness. These results are promising for application in the manufacture of thermoelectric batteries, gas, catalysts and photocatalysts.