Abstract
The dopant activation of arsenic- and boron-implanted low-pressure chemical vapor deposition (LPCVD) amorphous silicon (α-Si) films, furnace-annealed with different annealing temperatures has been investigated. For the arsenic-implanted specimens with a dosage of 4 × 10 14 cm −2, an increase of sheet resistance was observed with increasing annealing temperature for the temperatures range from 700 to 850°C. The reverse annealing phenomenon is attributed to dopant segregation at grain boundaries and becomes less marked with heavier doped films (2 × 10 15 cm −2). Consequently for a dosage of 1 × 10 16 cm −2, the sheet resistance exhibits a monotonic decrease with increasing annealing temperature. As for the boron-implanted specimens, the reverse annealing phenomenon is not observed. It means that dopant segregation is not significant for boron-implanted films.
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