Abstract
The contact resistance between Ti/TiN and a Ru electrode in metal-1/plate contacts of ruthenium insulator silicon (RIS) capacitor is investigated. When physical vapor deposition (PVD) Ti/TiN was used as a barrier metal for the metal contact process, a high contact resistance of more than 5000 Ω/contact was obtained due to the oxidation of Ti by the residual oxygen in Ru electrode. On the other hand, with a plasma enhanced chemical vapor deposition (PECVD) Ti/CVD TiN barrier metal, oxidation of Ti was not observed and subsequently a low contact resistance of 15 Ω/contact was obtained. The absence of Ti oxidation with PECVD Ti/CVD TiN can be explained by the reduction of oxygen in the Ru electrode due to the H2 plasma environment in the PECVD-Ti process.
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