Abstract
Solid-phase processes in thin films (∼200 nm) based on tin and indium oxides (ITO structures) prepared by magnetron sputtering from a composite target (93 at % In and 7 at % Sn) and by layer-by-layer deposition of In/Sn/Si and Sn/In/Si structures from two magnetrons in a single vacuum cycle have been investigated in the work under their oxidation in an oxygen flow. Two ways of optically transparent semiconductor film formation have been compared using near-edge fundamental absorption spectroscopy, x-ray diffraction analysis, and electron microscopy and dynamics of the change in their optical and structure properties has been studied. In the case of oxidation of the layer-by-layer deposited structures, the heterogeneous phase composition of the film is confirmed both by the XRD data and by the optical results. Only wide-band-gap phases with an energy of direct transitions of 3.5–3.6 eV have been found in the films prepared by magnetron sputtering from a composite target after their oxidation. These wide-band-gap phases are associated with In2O3 oxide and a tin-doped indium oxide compound.
Published Version
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