Abstract
We have investigated the optoelectronic properties like carrier concentration (NITO), mobility (µITO), work function (ϕITO), optical transmission and constants, and sheet resistance (Rsh) of tin-doped indium oxide (ITO) films with the variations in the oxygen flow rate during reactive sputter deposition with the Ar:O2 plasma. Initially, we also analyzed the generated Ar:O2 plasma parameters (ion energy and density, electron temperature, and energy distribution) using the Langmuir probe. The ITO films' optoelectronic properties were investigated systematically in as-deposited and annealed (150 to 200 °C) conditions with varying O2 flow rates. By varying the O2 flow rate, we observed the carrier mobility (µITO) of the ITO films in the range of 31-47 cm²/V-s, carrier concentration (NITO) in the range of 2.16 × 1019 - 5.22 × 1020 cm−3, and resistivity in the range of 3.57 × 10−4 - 8.95 × 10−4 Ω-cm. We were able to separate the roles of grain boundary and ionized impurity scatterings in modifying µITO as a function of NITO in the ITO films. Finally, using the transfer length method, we observed a contact resistivity of ∼3 mΩ-cm² from the ITO/Ag interface at the NITO of ∼4.08 × 1020 cm−3.
Published Version
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