Abstract
Double silicon-on-insulator (DSOI) technology featuring two buried oxide layers under silicon film has drawn excessive attention to space applications by modulating the electric field in back channel. This article studied the impact of the total ionizing dose (TID) effect on the n-channel metal oxide semiconductor field effect transistors (nMOSFETs) based on DSOI materials. Radiation-induced degradation in performance only appeared in the metal oxide semiconductor field effect transistor (MOSFET) with <inline-formula> <tex-math notation="LaTeX">$W/L = 0.15~\mu \text{m}$ </tex-math></inline-formula>/10 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> after 1.5 Mrad(Si) irradiation and recovered with negative <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {bg}}$ </tex-math></inline-formula> applied. However, due to the weak coupling effect between the front and back gates, the threshold voltage (<inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {th}}$ </tex-math></inline-formula>) of nMOSFET with <inline-formula> <tex-math notation="LaTeX">$W/L = 10~\mu \text{m}$ </tex-math></inline-formula>/10 <inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$10~\mu \text{m}/0.13~\mu \text{m}$ </tex-math></inline-formula> declined 0.06 V compared with devices before irradiation when <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm {bg}}$ </tex-math></inline-formula> is set to 0 V. The TCAD simulation and testing results reveal that the electric field introduced by negative back-gate bias could effectively mitigate the TID-induced performance degradation in DSOI nMOSFETs. The investigation will facilitate the application of DSOI technology for high-radiation-dose conditions.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call