Abstract
This paper comprehensively evaluates the effects of negative body bias and negative back-gate bias on the total ionizing dose (TID) effects in 130 nm partially-depleted (PD) SOI technology. We studied the T-gate/H-gate nMOSFETs and pMOSFETs, and found that the negative body bias is ineffective for radiation hardening. However, the negative back-gate bias is an effective method for hardening the nMOSFETs. When the back-gate is biased at −2.5 V during irradiation and measurement, the TID tolerance can be improved from below 50 krad(Si) to up 100 krad(Si) while the performance of pMOSFETs is not degraded. 3D TCAD simulations are performed to analyze the failure of the negative body bias and the effective mechanism of the negative back-gate bias.
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